Mechanism analysis of CuInS₂ and Cu(In,Ga)S₂ growth via KCN- and H₂S-free process and solar-cell application

Abstract In this article, CuInS 2 (CIS) and Cu(In,Ga)S (CIGS) absorbers are prepared via sulfurization by a sulfur powder source for co-evaporated Cu–In(–Ga) metal precursors without toxic KCN H S. The CIS CIGS growth mechanism during their application to solar cells discussed. X-ray diffraction Raman spectroscopy analyses indicate that CuS (In,Ga) S 3 exist at the frontside backside, respectively, in films temperature between 250 °C 350 °C. Then, these intermediate phases react 400 or higher forming CIGS. Finally, with efficiencies of 3.7% 7.2% achieved, utilizing an optimum 600